npn silicon planar medium power transistors issue 2 ? july 94 features * 150 volt v ceo * 1 amp continuous current * low saturation voltage *p tot = 1 watt absolute maximum ratings. parameter symbol ZTX654 ztx655 unit collector-base voltage v cbo 125 150 v collector-emitter voltage v ceo 125 150 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX654 ztx655 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo 125 150 v i c =100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 125 150 v i c =10ma, i b =0* emitter-base breakdown voltage v (br)ebo 55v i e =100 m a, i c =0 collector cut-off current i cbo 100 100 na na v cb =100v, i e =0 v cb =125v, i e =0 emitter cut-off current i ebo 100 100 na v eb =3v, i c =0 collector-emitter saturation voltage v ce(sat) 0.5 0.5 0.5 0.5 v v i c =500ma, i b =50ma* i c =1a, i b =200ma* base-emitter saturation voltage v be(sat) 1.1 1.1 v i c =500ma, i b =50ma* base-emitter turn-on voltage v be(on) 1.0 1.0 v i c =500ma, v ce =5v* static forward current transfer ratio h fe 50 50 20 50 50 20 i c =10ma, v ce =5v i c =500ma, v ce =5v* i c =1a, v ce =5v* transition frequency f t 30 30 mhz i c =10ma, v ce =20v f=20mhz output capacitance c obo 20 20 pf v cb =20v, f=1mhz e-line to92 compatible ZTX654 ztx655 3-225 c b e typical characteristics v ce(sat) v i c i c - collector current (amps) v ce (sa t ) - (v olts) i c - c o l le c to r c u r r e nt ( amps ) v ce - collector voltage (volts) safe operating area 11000 10 100 0.01 0.1 1.0 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 300s 0.01 0.1 10 1 i c - collector current (amps) v be(sat) v i c v b e (sat) - ( v olts) i c /i b =10 i c - collector current (amps) h fe v i c h fe - n o r mal i se d gain (% ) 0.01 10 0.1 1 v ce =5v 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 i c /i b =10 0.4 40 60 80 100 i c - collector current (amps) v be(on) v i c v be - (v olts) switching speeds i c - collector current (amps) switching t i m e 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr 0.6 0.7 0 ts s 2.0 1.0 3.0 td tr tf s 0.3 0.2 0.1 0.4 0.5 0.18 0.10 20 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 0.4 v ce =5v z t x 6 5 4 ztx655 v ce =10v ZTX654 ztx655 3-226
npn silicon planar medium power transistors issue 2 ? july 94 features * 150 volt v ceo * 1 amp continuous current * low saturation voltage *p tot = 1 watt absolute maximum ratings. parameter symbol ZTX654 ztx655 unit collector-base voltage v cbo 125 150 v collector-emitter voltage v ceo 125 150 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX654 ztx655 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo 125 150 v i c =100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 125 150 v i c =10ma, i b =0* emitter-base breakdown voltage v (br)ebo 55v i e =100 m a, i c =0 collector cut-off current i cbo 100 100 na na v cb =100v, i e =0 v cb =125v, i e =0 emitter cut-off current i ebo 100 100 na v eb =3v, i c =0 collector-emitter saturation voltage v ce(sat) 0.5 0.5 0.5 0.5 v v i c =500ma, i b =50ma* i c =1a, i b =200ma* base-emitter saturation voltage v be(sat) 1.1 1.1 v i c =500ma, i b =50ma* base-emitter turn-on voltage v be(on) 1.0 1.0 v i c =500ma, v ce =5v* static forward current transfer ratio h fe 50 50 20 50 50 20 i c =10ma, v ce =5v i c =500ma, v ce =5v* i c =1a, v ce =5v* transition frequency f t 30 30 mhz i c =10ma, v ce =20v f=20mhz output capacitance c obo 20 20 pf v cb =20v, f=1mhz e-line to92 compatible ZTX654 ztx655 3-225 c b e typical characteristics v ce(sat) v i c i c - collector current (amps) v ce (sa t ) - (v olts) i c - c o l le c to r c u r r e nt ( amps ) v ce - collector voltage (volts) safe operating area 11000 10 100 0.01 0.1 1.0 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 300s 0.01 0.1 10 1 i c - collector current (amps) v be(sat) v i c v b e (sat) - ( v olts) i c /i b =10 i c - collector current (amps) h fe v i c h fe - n o r mal i se d gain (% ) 0.01 10 0.1 1 v ce =5v 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 i c /i b =10 0.4 40 60 80 100 i c - collector current (amps) v be(on) v i c v be - (v olts) switching speeds i c - collector current (amps) switching t i m e 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr 0.6 0.7 0 ts s 2.0 1.0 3.0 td tr tf s 0.3 0.2 0.1 0.4 0.5 0.18 0.10 20 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 0.4 v ce =5v z t x 6 5 4 ztx655 v ce =10v ZTX654 ztx655 3-226
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